Fig. 8From: Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor MemoryThe electrical erasing characteristics of the devices programmed at 14 V for 5 ms. a Under a gate bias of −15 V for different times. b Under different gate biases for a constant erasing time of 200 ms. During all erasing operations, the source/drain electrodes were groundedBack to article page