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Table 1 The change in current (∆I) and sensitivity (S) of Si nanowire (SiNW), Ni-silicide nanocrystal modified Si nanowire (NMSiNW), and Ni-silicide/Si multi-stacked heterostructure nanowire (MSHNW) devices exposed to 750 ppm O2

From: Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires

 

I (A)

S

Si NW

0.9 × 10−9

1.8

NMSiNW

1.4 × 10−9

3.5

MSHNW

7.5 × 10−9

2.27

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