Table 1 The change in current (∆I) and sensitivity (S) of Si nanowire (SiNW), Ni-silicide nanocrystal modified Si nanowire (NMSiNW), and Ni-silicide/Si multi-stacked heterostructure nanowire (MSHNW) devices exposed to 750 ppm O2
From: Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires
∆I (A) | S | |
---|---|---|
Si NW | 0.9 × 10−9 | 1.8 |
NMSiNW | 1.4 × 10−9 | 3.5 |
MSHNW | 7.5 × 10−9 | 2.27 |