Fig. 6From: Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based StructuresEvolution of FTIR spectra with annealing temperature Ge-rich-ZrO2 films grown with RFPGe = 0.9 W/cm2 and measured under normal (a) and Brewster (b) incidence of exciting beam light. Annealing temperatures are mentioned in the figuresBack to article page