Fig. 7From: Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based StructuresEvolution of Raman scattering of pure Ge (a) and Ge-rich-ZrO2 (b, c) samples with annealing temperature (a, b) and Ge content in the films (c). For (b) RFPGe = 0.9 W/cm2, [Ge] ~ 22%Back to article page