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Table 1 The parameters of the samples versus deposition conditions

From: Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

RFPGe,

W/cm2

Ellipsometry data

RBS dataa

n @ 632.8 nm

Ge, at.%

Ge, at%

Zr, at %

O, at%

Si, at%

Density, at/cm2

0

1.970

0

0

26.5

67.0

6.0

1.35E + 18

0.7

1.749

~17

15.0

17.5

62.9

4.0

1.43E + 18

0.9

2.000

~21

(22.0)

(16.0)

(57.0)

(3.0)

-

1.1

2.641

~30

30.0

14.0

52.0

3.0

1.20E + 18

1.3

2.730

~32

(33.0)

(13.0)

(50.0)

(3.0)

-

1.6

2.983

~40

42.0

10.5

43.9

2.5

1.17E + 18

2.2

3.167

~47

53.0

8.0

35.9

2.0

1.09E + 18

  1. aNote. The content of the elements placed in the parentheses was obtained by the extrapolation of RBS data

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