Fig. 2

a Schematic cross section of heterostructure with quasi-anticorrelated interfaces of the metal film, where 1 semiconductor substrate; 2 bottom metal film with thickness h _{Au 1}; 3 chalcogenide nanowires with width of basis, d; 3 metal top film with thickness h _{Au 2}; and 4 ohmic contact. L is the structures period, and h is the grating depth. b SEM image of heterostructure surface fabricated by presented method based on the photoresistive laser interference lithography