Fig. 5From: Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory(Color online) The magnetoresistance varying as a function of sample angle at different temperatures. The direction and magnitude of the magnetic field are the same as those in Fig. 4a. The inflow of constant current is 10 μA to read the resistanceBack to article page