Fig. 6
From: Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory
(Color online) a–d Characteristics of magnetoresistance at θ = 0° at different temperatures in LRS. Direction of the external magnetic field is as shown in Fig. 4a. A constant current of 10 μA is applied to read the resistance. The red triangular line was tested with the magnetic field swept from + 2 T to −2 T, and the green circle line was obtained by sweeping the magnetic field from −2 T to + 2 T. The arrows in the figures represent the respective sweep directions. e Typical AMR curves and hysteresis loop [32]