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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Structural Investigation of Uniform Ensembles of Self-Catalyzed GaAs Nanowires Fabricated by a Lithography-Free Technique

Fig. 3

Size distributions at different steps of the self-catalyzed GaAs NW growth on lithography-free Si/SiOx patterns. a Diameter of the GaAs nanocrystals grown on oxide-free Si(111) by droplet epitaxy. b Diameter of the Ga catalyst droplets deposited in oxide-free areas formed by thermal desorption of the GaAs nanocrystals. c Diameter of the NWs with a Poissonian fit and Ga catalyst droplet diameters after a 60-min growth duration of sample NW1. d NW length of sample NW1 with a Poissonian fit after a 60-min growth duration. The measured and calculated Poissonian standard deviations are denoted by σ and σ P, respectively. The inset in d shows the correlation between NW length and Ga catalyst droplet diameter

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