Fig. 3From: Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different ThicknessPL measured as a function of the excitation intensity from 10−2 I 0 to 103 I 0 (I 0 = 1 W/cm2). a PL spectra for the 7-nm QW. b PL spectra for the 15-nm QW. c PL peak energy as a function of excitation intensity. d FWHM of PL spectra as a function of excitation intensity. e Integrated PL intensity of the QW as a function of the excitation intensity. Insets in a and b are low, mid, and high excitation intensity examples of PL spectra to show the profile transformation with the increasing excitation intensityBack to article page