Fig. 4From: Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different ThicknessPL spectra as a function of temperature for a 7-nm QW sample and b 15-nm QW sample. c The PL FWHM, d PL peak energy shift, and e integrated PL intensity vary as a function of temperature for the 7-nm QW and the 15-nm QW measured at the laser excitation intensity of I 0 = 1 W/cm2 Back to article page