Fig. 6From: Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness a Band profiles of the InGaAs/InAlAs QW with well thickness of 7 and 15 nm, b the E1-H1 transition energy as a function of the QW thickness with In composition varied ±2% in the InGaAs QW layer, and c the E1-H1 transition energy as a function of the QW thickness with In composition varied ±2% in the InAlAs barrier layersBack to article page