Fig. 7From: Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition TechniqueTransfer characteristics of bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 and 250 °C, in dry O2:Ar = 3:3 at 350 °C for an hourBack to article page