Fig. 4From: Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films a Raman spectra of SiNW fabricated by process A at 800, 900, and 1000 °C. b Raman spectra of SiNW fabricated by process B at 900 °C. c The ratio of Peak 2/Peak 1 and Peak 3/Peak 1Back to article page