Fig. 3

g map of the LM1 defect in MoS₂ sample 4MLa inferred from K-band ESR measurements at 4.2 K for B (at angle φ_B with n) rotating in the Si substrate (0‾11) plane. The solid curve represents an optimized fitting of expression g(φ_B) = [g _// ²cos²(φ_B) + g _⊥ ²sin²(φ_B)]^½ for a center of axial (C_3v) symmetry giving g _// = 2.00145 and g _⊥ = 2.0027