Skip to main content
Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

Fig. 3

g map of the LM1 defect in MoS2 sample 4MLa inferred from K-band ESR measurements at 4.2 K for B (at angle φB with n) rotating in the Si substrate (0‾11) plane. The solid curve represents an optimized fitting of expression gB) = [g // 2cos2B) + g 2sin2B)]½ for a center of axial (C3v) symmetry giving g // = 2.00145 and g  = 2.0027

Back to article page