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Table 1 The deposition parameters of the PVD and ALD processes

From: Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers

PVD deposition parameters

ALD deposition parameters

Al2O3

TiO2

Deposition temperature

350 °C

Precursor (TMA)

Cooling;

10 °C

Precursor (TTIP)

Heating; 60 °C

Deposition time

2 h

Reactant (H2O)

Cooling;

10 °C

Reactant (H2O)

Cooling; 10 °C

Working pressure

4.8 × 10−3 Torr

Purge gas

N2; 50 sccm

Purge gas

N2; 50 sccm

Ar flow rate

60 sccm

Deposition temperature

150 °C

Deposition temperature

150 °C

N2 flow rate

30 sccm

Line temperature

100 °C

Line temperature

100 °C

Bias voltage

100 V

Growth rate

1.5 Å/cycle

Growth rate

0.3 Å/cycle

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