Table 1 The deposition parameters of the PVD and ALD processes
From: Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers
PVD deposition parameters | ALD deposition parameters | ||||
---|---|---|---|---|---|
Al2O3 | TiO2 | ||||
Deposition temperature | 350 °C | Precursor (TMA) | Cooling; 10 °C | Precursor (TTIP) | Heating; 60 °C |
Deposition time | 2 h | Reactant (H2O) | Cooling; 10 °C | Reactant (H2O) | Cooling; 10 °C |
Working pressure | 4.8 × 10−3 Torr | Purge gas | N2; 50 sccm | Purge gas | N2; 50 sccm |
Ar flow rate | 60 sccm | Deposition temperature | 150 °C | Deposition temperature | 150 °C |
N2 flow rate | 30 sccm | Line temperature | 100 °C | Line temperature | 100 °C |
Bias voltage | 100 V | Growth rate | 1.5 Å/cycle | Growth rate | 0.3 Å/cycle |