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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Fig. 2

(Color online) Typical high-frequency (1 MHz) CV characteristics of the Au-Al2O3-TiAlO-SiO2-Si device (a) and Au-Al2O3-SiO2-Si device (b). c Memory window width dependence of the Au-Al2O3-TiAlO-SiO2-Si device under different sweeping voltages. d Dependence of the memory window width on the pulsed writing voltage height, the program/erase pulse width is fixed to be 1 s

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