Fig. 4From: Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon NanostructuresDark I-V curves (curves 1 and 2) and I-V curves after irradiation (curves 1’ and 2’) of the initial PS (curves 1 and 1’) and PS–RGO structures (curves 2 and 2’) performed using the AFM tip (a) and the ITO contact (b). Insets: schemes of the I-V curve measurement for experimental structuresBack to article page