Fig. 1From: PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity a Deposition rate of AlN thin films on Si (100) at different temperature. b Precursor saturation curves at 300 °C. Black square represents N2/H2 plasma that was kept constant at 30 s for TMA dose saturation curves. Black triangle represents N2/H2 plasma saturation curve with an optimal TMA dose of 0.05 sBack to article page