Skip to main content

Table 1 Deposition conditions of the AlN films by PEALD

From: PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

Precursor 1 TMA (99.999%)
Precursor 2 Ar/N2/H2 (99.999%)
Carrier gas Ar (99.999%)
Gas line temperature 60 °C
Flow rate of carrier gas (UHP Ar) 5 sccm
Flow rate of N precursor 5 sccm
RF power 60 W
RF plasma frequency 13.56 MHz