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Table 1 The results of Si-doped and Be-doped Au-catalyzed GaAs nanowires electrical measurements, including electrical resistivity that determined by single Au-catalyzed GaAs nanowire devices, reference layer doping concentration, and carrier species are determined by Hall measurements

From: Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

Sample

Resistivity (Ω m)

Reference layer doping (cm−3)

Carrier species

Si-doped 1250 °C

7.89 × 10−2

2.75 × 1019

Electron

Si-doped 1300 °C

5.98 × 10−2

3.95 × 1019

Electron

Si-doped 1350 °C

2.69 × 10−3

8.92 × 1019

Electron

Si-doped 1400 °C

4.31 × 10−1

2.51 × 1018

Electron

Be-doped 1000 °C

4.30 × 10−3

1.12 × 1018

Hole

Be-doped 1150 °C

4.39 × 10−2

5.92 × 1016

Hole

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