Table 1 The results of Si-doped and Be-doped Au-catalyzed GaAs nanowires electrical measurements, including electrical resistivity that determined by single Au-catalyzed GaAs nanowire devices, reference layer doping concentration, and carrier species are determined by Hall measurements
Sample | Resistivity (Ω m) | Reference layer doping (cm−3) | Carrier species |
---|---|---|---|
Si-doped 1250 °C | 7.89 × 10−2 | 2.75 × 1019 | Electron |
Si-doped 1300 °C | 5.98 × 10−2 | 3.95 × 1019 | Electron |
Si-doped 1350 °C | 2.69 × 10−3 | 8.92 × 1019 | Electron |
Si-doped 1400 °C | 4.31 × 10−1 | 2.51 × 1018 | Electron |
Be-doped 1000 °C | 4.30 × 10−3 | 1.12 × 1018 | Hole |
Be-doped 1150 °C | 4.39 × 10−2 | 5.92 × 1016 | Hole |