Fig. 4From: In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS ApplicationsBand alignment and structure. a Band alignment of HfO2/TiN structure was measured by the UPS and SE measurement. b Structure of TiN/HfO2 capacitor was used to introduce the calculation method of the areal density of the oxygen vacanciesBack to article page