TY - STD TI - Nainani A, Gupta S, Moroz V, Choi M, Kim Y, Cho Y (2012) Is strain engineering scalable in FinFET era?: teaching the old dog some new tricks. In: International Electron Devices Meeting in 2012. IEDM'12, IEEE pp 18–3 ID - ref1 ER - TY - STD TI - Wang GH, Toh EH, Hoe KM, Tripathy S, Balakumar S, Lo GQ et al (2006) Strained silicon-germanium-on-insulator n-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner, in Electron Devices Meeting, 2006. IEDM'06. IEEE pp. 1–4 ID - ref2 ER - TY - JOUR AU - Radamson, H. H. AU - Kolahdouz, M. PY - 2015 DA - 2015// TI - Selective epitaxy growth of Si1-xGex layers for MOSFETs and FinFET JO - J Mater Sci Mater Electron VL - 26 UR - https://doi.org/10.1007/s10854-015-3123-z DO - 10.1007/s10854-015-3123-z ID - Radamson2015 ER - TY - JOUR AU - Wang, G. L. AU - Moeen, M. AU - Abedin, A. AU - Kolahdouz, M. AU - Luo, J. AU - Qin, C. L. AU - Zhu, H. L. AU - Yan, J. AU - Yin, H. Z. AU - Li, J. F. AU - Zhao, C. AU - Radamson, H. H. PY - 2013 DA - 2013// TI - Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS) JO - J Appl Phys VL - 114 UR - https://doi.org/10.1063/1.4821238 DO - 10.1063/1.4821238 ID - Wang2013 ER - TY - JOUR AU - Wang, G. L. AU - Abedin, A. AU - Moeen, M. AU - Kolahdouz, M. AU - Luo, J. AU - Guo, Y. L. AU - Chen, T. AU - Yin, H. X. AU - Zhu, H. L. AU - Li, J. F. AU - Zhao, C. AU - Radamson, H. H. PY - 2015 DA - 2015// TI - Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology JO - Solid State Electron VL - 103 UR - https://doi.org/10.1016/j.sse.2014.07.008 DO - 10.1016/j.sse.2014.07.008 ID - Wang2015 ER - TY - JOUR AU - Hållstedt, J. AU - Kolahdouz, M. AU - Ghandi, R. AU - Radamson, H. H. AU - Wise, R. PY - 2008 DA - 2008// TI - Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors[J] JO - J Appl Phys VL - 103 UR - https://doi.org/10.1063/1.2832631 DO - 10.1063/1.2832631 ID - Hållstedt2008 ER - TY - STD TI - Ota K, Sugihara K, Sayama H, Uchida T, Oda H, Eimori T et al (2002) Novel locally strained channel technique for high performance 55nm CMOS. In: International Electron Devices Meeting in 2002. IEDM'02, IEEE pp 27–30 ID - ref7 ER - TY - STD TI - Yang H, Malik R, Narasimha S, Li Y, Divakaruni R, Agnello P et al (2004) Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing. In: International Electron Devices Meeting in 2004. IEDM'04, IEEE pp 1075–1077 ID - ref8 ER - TY - STD TI - Kang C, Choi R, Song S, Choi K, Ju B, Hussain M et al (2006) A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs. In: International Electron Devices Meeting, 2006. IEDM'06, IEEE pp 1–4 ID - ref9 ER - TY - CHAP AU - Auth, C. AU - Cappellani, A. AU - Chun, J. -. S. AU - Dalis, A. AU - Davis, A. AU - Ghani, T. PY - 2008 DA - 2008// TI - 45nm high-k+ metal gate strain-enhanced transistors BT - VLSI Technology 2008 Symposium UR - https://doi.org/10.1109/VLSIT.2008.4588589 DO - 10.1109/VLSIT.2008.4588589 ID - Auth2008 ER - TY - CHAP AU - Auth, C. AU - Allen, C. AU - Blattner, A. AU - Bergstrom, D. AU - Brazier, M. AU - Bost, M. PY - 2012 DA - 2012// TI - A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors BT - VLSI Technology (VLSIT) 2012 Symposium UR - https://doi.org/10.1109/VLSIT.2012.6242496 DO - 10.1109/VLSIT.2012.6242496 ID - Auth2012 ER - TY - JOUR AU - Klaus, J. AU - Ferro, S. AU - George, S. PY - 2000 DA - 2000// TI - Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction JO - Thin Solid Films VL - 360 UR - https://doi.org/10.1016/S0040-6090(99)01076-7 DO - 10.1016/S0040-6090(99)01076-7 ID - Klaus2000 ER - TY - JOUR AU - Kim, S. -. H. AU - Kwak, N. AU - Kim, J. AU - Sohn, H. PY - 2006 DA - 2006// TI - A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug deposition JO - J Electrochem Soc VL - 153 UR - https://doi.org/10.1149/1.2222966 DO - 10.1149/1.2222966 ID - Kim2006 ER - TY - JOUR AU - Wang, G. AU - Xu, Q. AU - Yang, T. AU - Xiang, J. AU - Xu, J. AU - Gao, J. PY - 2014 DA - 2014// TI - Application of atomic layer deposition tungsten (ALD W) as gate filling metal for 22 nm and beyond nodes CMOS technology JO - ECS J. Solid State Sci. Technol. VL - 3 UR - https://doi.org/10.1149/2.015404jss DO - 10.1149/2.015404jss ID - Wang2014 ER - TY - JOUR AU - Yang, T. AU - Wang, G. AU - Xu, Q. AU - Lu, Y. AU - Yu, J. AU - Cui, H. PY - 2013 DA - 2013// TI - ALD W CMP for HKMG JO - ECS Trans. VL - 58 UR - https://doi.org/10.1149/05809.0049ecst DO - 10.1149/05809.0049ecst ID - Yang2013 ER - TY - JOUR AU - Xu, Q. AU - Luo, J. AU - Wang, G. AU - Yang, T. AU - Li, J. AU - Ye, T. PY - 2015 DA - 2015// TI - Application of ALD W films as gate filling metal in 22 nm HKMG-last integration: evaluation and improvement of the adhesion in CMP process [J] JO - Microelectron. Eng. VL - 137 UR - https://doi.org/10.1016/j.mee.2015.01.007 DO - 10.1016/j.mee.2015.01.007 ID - Xu2015 ER - TY - JOUR AU - Radamson, H. H. AU - Hallstedt, J. PY - 2005 DA - 2005// TI - Application of high-resolution X-ray diffraction for detecting defects in SiGe(C) materials JO - J Phys Condens Matter VL - 17 UR - https://doi.org/10.1088/0953-8984/17/22/020 DO - 10.1088/0953-8984/17/22/020 ID - Radamson2005 ER - TY - JOUR AU - Hansson, G. V. AU - Radamsson, H. AU - Ni, W. -. X. PY - 1995 DA - 1995// TI - Strain and relaxation in Si-MBE structures studied by reciprocal space mapping using high resolution X-ray diffraction[J] JO - J Mater Sci Mater Electron VL - 6 UR - https://doi.org/10.1007/BF00125883 DO - 10.1007/BF00125883 ID - Hansson1995 ER - TY - JOUR AU - Matsuki, T. AU - Mise, N. AU - Inumiya, S. AU - Eimori, T. AU - Nara, Y. PY - 2007 DA - 2007// TI - Impact of gate metal-induced stress on performance modulation in gate-last metal–oxide–semiconductor field-effect transistors JO - Jpn J Appl Phys VL - 46 UR - https://doi.org/10.1143/JJAP.46.3181 DO - 10.1143/JJAP.46.3181 ID - Matsuki2007 ER - TY - JOUR AU - Bhushan, B. AU - Li, X. PY - 1997 DA - 1997// TI - Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices [J] JO - J. Mater. Res. VL - 12 UR - https://doi.org/10.1557/JMR.1997.0010 DO - 10.1557/JMR.1997.0010 ID - Bhushan1997 ER - TY - JOUR AU - Lim, J. -. S. AU - Thompson, S. E. AU - Fossum, J. G. PY - 2004 DA - 2004// TI - Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs JO - Electron Device Letters IEEE VL - 25 UR - https://doi.org/10.1109/LED.2004.837581 DO - 10.1109/LED.2004.837581 ID - Lim2004 ER - TY - STD TI - Thompson S, Sun G, Wu K, Lim J, Nishida T (2004) Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs. In: Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, IEEE pp 221–224 ID - ref22 ER - TY - JOUR AU - Loo, R. AU - Sorada, H. AU - Inoue, A. AU - Lee, B. AU - Hyun, S. AU - Jakschik, S. PY - 2007 DA - 2007// TI - Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices JO - Semiconductor Science and Technology VL - 22 UR - https://doi.org/10.1088/0268-1242/22/1/S26 DO - 10.1088/0268-1242/22/1/S26 ID - Loo2007 ER - TY - JOUR AU - Ng, K. K. AU - Lynch, W. PY - 1987 DA - 1987// TI - The impact of intrinsic series resistance on MOSFET scaling JO - Electron Devices IEEE Transactions VL - 34 UR - https://doi.org/10.1109/T-ED.1987.22956 DO - 10.1109/T-ED.1987.22956 ID - Ng1987 ER - TY - JOUR AU - Claeys, C. AU - Simoen, E. AU - Put, S. AU - Giusi, G. AU - Crupi, F. PY - 2008 DA - 2008// TI - Impact strain engineering on gate stack quality and reliability JO - Solid State Electron. VL - 52 UR - https://doi.org/10.1016/j.sse.2008.04.035 DO - 10.1016/j.sse.2008.04.035 ID - Claeys2008 ER -