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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Fig. 3

a I DS-V GS characteristics of the ALD-AlN passivated HEMT with (blue squares) and without (red circles) plasma pre-treatment (V DS = 10 V). b I DS-V DS characteristics of ALD-AlN passivated HEMT (V GS from -8 to 2 V with 2 V step). c Pulsed I DS-V DS characteristic of HEMT with (blue squares) and without (red circles) plasma pre-treatment, V GSQ at -10 V, V DSQ sweep from 0 V to 40 V. d Current collapse (%) versus quiescent drain bias (V DSQ)

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