Table 1 Surface treatment and high-κ dielectric growth condition by PEALD
Condition | TMA | 2800 W N2 Plasma (Ar: 160 sccm) | 2800 W NH3 Plasma (Ar: 110 sccm) | 1500 W H2 Plasma (Ar: 30 sccm) | 1500 W NH3 Plasma (Ar: 30 sccm) | Cycles | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|
Flow | Pulse/purge | Flow | Pulse/purge | Flow | Pulse/purge | Flow | Pulse/purge | Flow | Pulse/purge | ||
Pre-treatment (300 °C) | 15 | 5/5 | 50 | 5/5 | 36 | ||||||
N2-based AlN (350oC) | 150 | 0.1/5 | 40 | 5.5/8 | 45 | ||||||
NH3-based AlN (300 °C) | 150 | 0.1/5 | 80 | 11.5/8 | 19 | ||||||
Unit: | (sccm) | (s) | (sccm) | (s) | (sccm) | (s) | (sccm) | (s) | (sccm) | (s) | cyls |