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Table 1 Surface treatment and high-κ dielectric growth condition by PEALD

From: AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Condition TMA   2800 W
N2 Plasma
(Ar: 160 sccm)
2800 W
NH3 Plasma
(Ar: 110 sccm)
1500 W
H2 Plasma
(Ar: 30 sccm)
1500 W
NH3 Plasma
(Ar: 30 sccm)
Cycles
Flow Pulse/purge Flow Pulse/purge Flow Pulse/purge Flow Pulse/purge Flow Pulse/purge
Pre-treatment (300 °C)        15 5/5 50 5/5 36
N2-based AlN (350oC) 150 0.1/5 40 5.5/8        45
NH3-based AlN (300 °C) 150 0.1/5    80 11.5/8      19
Unit: (sccm) (s) (sccm) (s) (sccm) (s) (sccm) (s) (sccm) (s) cyls