Fig. 1From: Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer DepositionXPS spectra of SiO2/Ge and HfO2/SiO2/Ge structures. a Si 2p spectra of SiO2, as-deposited and annealed HfO2/SiO2 on Ge. b Si 2p spectra of thick SiO2(7 nm) on Ge. c, d Hf 4f and Ge 3d spectra of as-deposited and annealed HfO2/SiO2/Ge structuresBack to article page