Fig. 2From: Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer DepositionElectric characteristics of HfO2/SiO2 gate stacks on Ge substrates before and after 500 °C PDA. a High-frequency (1 M Hz) C-V curves. b J-V curvesBack to article page