Fig. 3From: Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer DepositionDistribution of Dit below Ec in the band gap at room temperature for Pt/HfO2/SiO2/Ge before and after 500 °C PDABack to article page