Fig. 5From: Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer DepositionBand alignment of as-deposited and annealed HfO2/SiO2 film on Ge. aValence-band spectra of the Ge substrate, as-deposited and annealed HfO2/SiO2 films. b Schematic of band alignment of as-deposited and annealed HfO2/SiO2 film on GeBack to article page