Fig. 6From: Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting DiodesThe total (κ), radiative (κ r), and nonradiative (κ nr) decay rates as functions of applied voltage for the c- (filled symbols) and m-LEDs (unfilled symbols)Back to article page