Fig. 1From: Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures(Color online) Schematics of the metamorphic InAs/In0.15Ga0.85As/si-GaAs and InAs/GaAs/si-GaAs QD samples investigated: layer thickness, composition, and doping are indicated; AFM images of the uncapped structures are shown as wellBack to article page