Fig. 5From: Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures(Color online) Dependences of PV on the excitation intensity at different photon energies for a InAs/In0.15Ga0.85As and b InAs/GaAs structures; the lines are the functions f(I ex) ∝ (I ex)α Back to article page