Fig. 6From: Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures(Color online) Room temperature (T = 300 K) photosensitivity spectra of the metamorphic InAs/In0.15Ga0.85As and conventional InAs/GaAs QD structures. Inset: electric scheme of connecting the sample for PC measurements. RL Load resistanceBack to article page