Fig. 2From: Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition SystemC-V characteristics measured at 1 MHz for (a) directly deposited samples without O2 plasma pretreatment, and (b) samples with O2 plasma pretreatment; (c) estimated Q f of the annealed HfO2 thin filmsBack to article page