Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Table 2 Calculated fixed charge density (Q _f) and interface defect density (D _it) from C-V measurement of the HfO₂ thin films

Sample	Fixed charge density, Q _f (×10¹² cm⁻²)	Interface defect density, D _it (×10¹³ eV⁻¹ cm⁻²)
SO	12.0	5.21
SO-A400	8.22	4.73
SO-A450	6.13	4.42
SO-A500	3.82	3.82