Fig. 3From: Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS DeviceTypical frequency-dependent parallel conductance (a) with 0 < V G < 1.5 V (b) with 1.5 V < V G < 2.6 V (subthreshold region) (c) with V G < 0 V (deep depletion region); the dots are the experimental data and the solid lines are fitting curvesBack to article page