Fig. 2From: Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic ApplicationsADF images of samples a C1 with 200 nm of active layer, b C2 with 400 nm of active layer and c C3 with 750 nm of active layer acquired along the [110] zone axisBack to article page