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Table 1 Nominal growth rate (Vg), N OED and Sb flux

From: Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Sample

V g(ML/s)

N OED (mV)

Sb4 BEP (10−7 Torr)

C0

1

1260

0

C1

2

3000

2.6

C2

2

3030

1.6

C3

2

3050

1.3

C3L

1

1530

1.3

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