Fig. 5From: Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron SpectroscopyTime-resolved plots showing the respective binding energies vs. X-ray irradiation time for a 3 nm, b 4 nm, c 5 nm, and d 8 nm Al2O3 films on Zn0.8Al0.2O on Si substrates, with application of a low-energy electron flood gunBack to article page