Fig. 3From: Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealingChange of EL spectrum (a) and change in the magnitude of peaks D1–D4 and BEL (b) samples subjected to plastic deformation (N d ~ 107 cm−2) at different time of high temperature annealing (T = 1000 °C) in FOABack to article page