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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Fig. 4

IR spectra of atoms and molecules vibrational levels in p-type silicon crystals subjected to a different type of pretreatment: 1 initial sample of p-type silicon, 2 plastically deformed sample with the concentration of dislocations N d ≈ 107 cm−2, 3 plastically deformed sample that was subjected to additional high temperature annealing

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