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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Fig. 5

Capacitive-modulation spectrum of deep levels in the bandgap of silicon of samples at a frequency of 500 Hz (a): 1 initial sample of p-type silicon, 2 plastically deformed sample with the concentration of dislocations N d ≈ 107 cm-2, 3 plastically deformed sample that was subjected to additional high temperature annealing. b DLCMS graph zoomed in a range of temperatures from 215 to 245 K

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