Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Table 1 Passband maximums and corresponding defect structures obtained from a comparative analysis of vibrational spectrum of silicon samples subjected to different treatment with the literature data

Initial sample of p-Si		Plastically deformed sample		The sample annealed in oxygen after plastic deformation
λ(max), cm⁻¹	Complex	λ(max), cm⁻¹	Complex	λ(max), cm⁻¹	Complex
1068	O–Si–O	1042	O–Si–O	1060	O–Si–O
1203	C–C	1153	C–C	1379	C–CH₃
1394.5	C–CH₃	1253	Si–O–C	2136	Si–H₃
1665	H–O–H	1352	C–CH₃	2384	O₃–Si–H
1720	C = O	1704	C = O	2455	C–H₂
2126	Si–H₃	2151	Si–H₃	2960	C–H₂
2370	O₃–Si–H	2403	O₃–Si–H	3193	Si–O–H
2406	O₃–Si–H	2846	C–H₂	3706	O–H
2873	C–H₂	3170	Si–O–H
3173	Si–O–H	3672	O–H
3801	O–H	3672	O–H