Fig. 8From: Effect of Systematic Control of Pd Thickness and Annealing Temperature on the Fabrication and Evolution of Palladium Nanostructures on Si (111) via the Solid State DewettingReflectance spectra of the Pd nanostructures on Si (111) fabricated at varying temperatures. a–k Bare Si (111) and samples annealed at 300–800 °C for 450 s with 5 nm of Pd deposition amount. l Summary plot of average reflectance. m–o Summary plots of PC, PP, and FWHM of the Raman spectra as a function of the annealing temperatureBack to article page