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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation

Fig. 2

L-I curves of the simulated LD structures for various Auger recombination coefficient (C) values from 1 × 10−31 to 4 × 10−30 cm6/s at 20 °C. Here, the barrier thickness and doping concentration are fixed at 10 nm and 1 × 1017 cm−3, respectively. The L-I curve of the reference LD is represented as solid dots

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