Fig. 4From: Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical SimulationThreshold current (I th) as a function of temperature for barrier doping concentrations of 0.1, 1, 2, and 3 × 1018 cm−3. The T 0 value for each doping concentration is shown. Here, the barrier thickness is fixed at 10 nmBack to article page