Fig. 6From: Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical SimulationGain concentration distribution at 30 mA for temperatures of 20, 40, 60, and 80 °C when the n-type doping concentrations of the barrier are a 1 × 1017 cm−3 and b 2 × 1018 cm−3. Here, the barrier thickness is fixed at 10 nmBack to article page