Fig. 6From: Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour a Schematic of the single layer TiN/ZrO2/TiN device. b I–V characteristics of the electroforming process for the TiN/ZrO2/TiN device. c I–V characteristics of the TiN/ZrO2/TiN device after forming. d I–V curves of the SET process in double-logarithmic plot with linear fittingBack to article page