Fig. 7From: Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching BehaviourSchematics of the switching mechanism on the tri-layer TiN/ZrO2/ZrO2 − x /ZrO2/TiN device for the interfacial switching mode (a–e). The transformation from interfacial mode to filamentary mode (f) and the filamentary mode (g, h)Back to article page