Fig. 2From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionThe typical bipolar resistive switching characteristics of the RRAM devices. a Pt/HfO2/TiO2/HfO2/Pt. b Pt/HfO2/TiO2/HfO2/TiNBack to article page